Search Documents

Bernard MacDonald, Guanajuato, Mexico (communication to the Secretary*):—Mr. Iceyes's paper is very interesting to me because of my personal experience with the development of the ore-deposits of Lake Valley.

Jan 1, 1909

By Albert Hill Fay

IN giving a sketch of the geology and mining of the tin-deposits of Cape Prince of Wales, a short description of the geographic and climatic conditions may be of special interest on account of this being a part of the world of which very little is known, even by the reading public. As shown in Fig. 1, the location of the Cape is lat. N. 65° 35' and long. W. 168°. It is bounded on the north by the Arctic ocean ; on the west by Bering strait and on the south by Bering sea. It is the western-most point of the mainland of North America, and to the west, across the strait, one can see East Cape, Siberia, which consists of a rugged, steep coast of granite cliffs. The climatic conditions are of interest because of the part they have had in the surface geology, and also because they affect mining from an economic standpoint. In connection with the climate and geography, it does not seem out of place here to quote a few lines from the prologue of The Wandering Jew, written by Eugene Sue, under the caption '1 The Land's End of Two Worlds."

Sep 1, 1907

By M. R. Lorenz

Efficient visible light emission from p-n junctions in semiconductors is currently achieved in the four materials, Sic, GaP, ]Ga1-xAs and GaAs1-x,. Recent advances in materials preparation and p-n junction formation are briefly reviewed. The radiative recombination processes in the different materials depend largely on the band structure and the impurity states of each material. The spectral distribution of the emission ranges from the blue in Sic, to green in Gap, yellow in Sic and red in Gap, Ga1-x AlxAs and GaAs1-x Px. The origin of the various processes are discussed. The conversion of the electrical power into optical power and the measurement of the conversion efficiency are reviewed. The currently maximum quantum efficiencies at 300°K are: 3 pct in GaP(red), 1 pct in SiC(yellow), 0.1 pct in GaP(green), 0.2 pct in Ga1-x AlxAs at 66001, and 0.1 pct in GaAs1-x Px at 6800. The brightness and the interplay of the quantum efficiency and the luminous efficiency are given detailed consideration. VISIBLE light generated by the application of a direct current to a semiconductor crystal was first observed by Lossev1 in 1923. Light emission came from naturally occurring junctions in Sic crystals but little was known then with regard to the mechanism of charge transport and light emission. Some nearly 30 years later and with a vastly increased understanding of semiconductors the phenomenon of electroluminescence was studied in more detail, for example in p-n junctions of germanium.2 In these early studies, the efficiency of converting the electron current into a photon current was very low and therefore aroused little interest toward practical application. More recently it became apparent that in certain materials, for instance GaAs, and under certain conditions, the conversion efficiency was not low at all.3 The subsequent discovery of the p-n junction laser4-6 provided the impetus for increased studies of electroluminescence. Light emitted from GaAs occurs in the infrared region of the electromagnetic spectrum and is not visible to the eye. At nearly the same time the use of GaAs1-xPx led to laser action at low temperatures which was visible to the eye.7 Later a red light emitting diode, made from Gap, was reportedS which emitted incoherent radiation at 300°K with an external quantum efficiency of about 1.5 pct. The fact that such efficient devices were obtainable led to a more concentrated effort in the search for highly efficient room-temperature semiconductor light sources. It is some of this later work on p-n junction luminescence with which we will be concerned here. Since our aim is centered on visible light, with hv =1.8 ev ( ?=7000?), only the wider band gap semiconductors are of interest, i.e., Eg 1 1.8 ev. Although many compounds meet this criterion, only a limited number of those are also good semiconductors, i.e. contain low resistance n and p regions. Some of the more promising candidates are listed in Table I. We will only be concerned with light generation from a p-n junction. This limitation excludes essentially the group II-VI binary compounds, although we will briefly review the case of ZnTe and the solid solution ZnTe1-xSex. As we will show they may contain a p-n junction but only of a special kind. Most of the discussion will deal with the four materials, Sic, Gap, Gal-xAlxAs, and GaAs1-xPx. These appear to be at the present time the best visible light emitting semiconductors. In the following sections we will briefly consider: 1) the electrical properties of p-n junctions; 2) some recent advances in materials preparation; 3) the formation of p-n junctions; and then in somewhat greater detail we will consider: 4) the various radiative recombination processes; 5) the measurement and observation of the external quantum efficiency; 6) the luminous efficiency; 7) the brightness of light emitting diodes (LED'S). THE P-N JUNCTION The p-n junction in a semiconductor crystal is the interface between two differently doped regions. More specifically the p region is doped predominantly with acceptor impurities and the n region contains predominantly donor impurities. The energy band structure of a degenerate p-n junction at thermal equilibrium is shown in Fig. l(a). The excess electrons on the n side of the junction are confined to this region by the barrier potential Eg. Similarly the excess holes on the p-side of the junction are confined to the p-region by a similar potential barrier. If we now apply a dc voltage V such that the p region is made positive and the n region negative, the barrier potential EB is reduced by the applied voltage, V and the junction is said to be forward biased. With the barrier potential lowered, electrons and holes can drift toward the p region and n region, respectively, see Fig. l(b). The current voltage characteristics of p-n junctions in most wide band gap materials can be described by the relation: J = Joexp(eV/BkT) [1] where the functional form of Jo is determined by the recombination mechanism. Jo is generally a complicated parameter which depends on a number of different factors including temperature, junction width, bias voltage, and carrier lifetimes. The parameter B also depends on the recombination mechanism but

Jan 1, 1970

By Robert F. Mehl

Jan 1, 1944

By Robert F. Mehl

Jan 1, 1944

By C. H. Li, S. H. Bendel, J. A. Sartell

Small additions of Mg to a 62 Cu-38 Ni alloy reduce the oxidation yates drastically between 500° and 850°C. Metallographic examination of the oxide scale disclosed a continuous network, identified by X-ray diffraction as (Ni, Mg)O solid solutions, located along the former alloy grain boundaries. This network acts as a barrier to diffusion. It is thought to result from the segregation of mg to the alloy grain boundaries. Oxidation occurs preferentially in these regions because of the presence of this more active element. To substantiate these ideas, homogenized alloys ulere oxidized. No oxide network was produced and oxidation rates were the same as for the parent 62 Cu-38 Ni alloy. An interesting aspect of the oxidation of the 62 Cu-38 Ni alloy previously described by the present authors, is the relationship between oxidation kinetics and changes in the microstructure of the oxide.' The oxide scale on these alloys consists of two layers: a thin layer of CuO outside a much thicker layer of Cu20 in which particles of NiO are dispersed. In addition, immediately beneath the oxide-metal interface there is an internally oxidized zone in which NiO particles are dispersed in a copper-rich alloy matrix. Experimental observations on the growth of the individual layers under isothermal conditions have led to the conclusion that the rate-determining step in the oxidation of this alloy is the diffusion of anions through the Cu20 layer. It has been found that this diffusion rate is increased by the recrystallization of the outer CuO layer. Willardson and Gorton have reported that the addition of magnesium to the 62 Cu-38 Ni alloy causes a decrease in the oxidation rate.2 The present investigation was undertaken in order to determine the mechanism by which magnesium additions improve the oxidation resistance of the 62 Cu-38 Ni alloy. EXPERIMENTAL PROCEDURE Fifty-gram ingots of Cu-Ni alloys were prepared by vacuum melting materials of 99.999+ pct purity. These ingots were then remelted in a He atmos- phere and magnesium added in the form of a previously prepared and analyzed Cu-Mg master alloy. This procedure was necessitated by the high reactivity of pure magnesium at high temperatures. The proportion of the alloying elements was adjusted so as to obtain alloys with the desired magnesium content while maintaining a Cu-Ni ratio of 62 :38 by weight. (All alloy compositions will be given in weight percent.) Since it was considered desirable to study the oxidation of only single-phase, solid-solution alloys, it was necessary first to determine the approximate limit of solid solubility of magnesium in the 62 Cu-38 Ni alloy. A series of melts with various magnesium contents was made, homogenized by annealing for 48 hr at 975OC, then cooled in the furnace. Metallographic samples were prepared, etched in a potassium dichromate solution and examined at XI500 for the presence of a second phase. The alloys were then chemically analyzed and it was found that the approximate limit of solid solubility of magnesium in the 62 Cu-38 Ni alloy was 1 pct Mg. The ingots containing less than 1 pct Mg (0.19, 0.29, 0.58, and 0.87 pct Mg) were cold-rolled down to thicknesses suitable for oxidation experiments and specimens for gravimetric studies were cut to dimensions of 3.0 by 1.5 by 0.05 cm, specimens for inert marker studies, 0.6 by 0.6 by 0.17 cm. These were heat-treated in a protective atmosphere at a temperature (975" C) well above the oxidation temperatures and furnace-cooled to insure structural stability of the alloy during oxidation. Immediately prior to oxidation, the specimens were chemically cleaned by immersion for 1 min in a solution of 2 parts nitric acid, 1 part acetic

Jan 1, 1961

By S. R. Seagle, R. Schuhmann, N. A. Parlee

Rates of CO evolution and CO absorption were measured for liquid-iron alloys containing from 0.15 to 4.4 pet C, using a modified Sieverts apparatus. The alloys were held in alumina crucibles, so that both crucible-metal and gas-metal reactions occurred simultaneously. The data are interpreted on the hypothesis that the C-O reaction rate is controlled by oxygen diffusion across the boundary layers at the gas-metal and crucible-metal surfaces. CARBON-monoxide evolution from liquid Fe-C-0 alloys is a key reaction in steelmaking processes, both in the steelmaking furnace and in the ingot mold. Also, this reaction probably is an essential step in the desulfurization of iron under blast-furnace conditions, for which carbon is the principal reducing agent or deoxidizer present in the iron. The thermodynamic properties of the solutions of C and 0 in Fe and the equilibria of these solutions with gaseous CO and CO, have been investigated in some detail and are reasonably well understood. However, while these equilibrium data have accumulated in the laboratory, other data have accumulated to show that equilibrium conditions are often not achieved under plant operating conditions. Thus, an understanding of the rate and mechanism of the carbon-oxygen reaction not only has theoretical interest, but ultimately may assume considerable practical importance. Reaction Mechanisms and Rate Equations The over-all reaction under consideration is C (in liquid Fe) + 0 (in liquid Fe) + CO (gas) [I] Although this appears to be a straightforward heterogeneous reaction, involving just two phases (liquid metal and gas), a wide variety of reaction mechanisms has been proposed. Different authors have expressed divergent views as to the nature of the rate-controlling steps. Accordingly, a brief discussion of the possible reaction steps will be given. 1) Homogeneous Reaction Within Liquid Iron— Feild' and Jette2 have applied chemical reaction-rate theory as if the C-0 reaction were a homogeneous, second-order reaction occurring within the liquid-metal phase. This mechanism necessarily produces CO "molecules" dissolved in liquid iron. In order to yield CO gas, the dissolved CO must nucleate CO gas bubbles, and the dissolved CO also must be transported to the bubble surface where it enters the gas phase. However, this mechanism is inconsistent with present concepts of the structure of liquid-metal solutions. 2) Reaction at Gas-Metal Interface—At the surface of contact between gas and metal, a second-order reaction between dissolved C and 0 may occur to produce a CO molecule which enters the gas phase. This reaction presumably involves an "activated complex" structure in the interface. Some such surface mechanism appears essential because the carbon and oxygen do not occur in the same species in the two phases and therefore must react in some way at the surface. At liquid-iron temperatures, calculations based on reaction-rate theory indicate that the surface reaction must proceed extremely rapidly and thus cannot be a rate-determining step in the C-O reaction under ordinary conditions.3 ccordingly when the over-all reaction is measurably slow, the surface reaction may be considered at equilibrium; that is Cc* Co* = m'Pco [2] in which Co* and Co* are the concentrations of carbon and oxygen (weight per unit volume of metal), respectively, in the liquid-metal phase at the interface, Poo* is partial pressure of CO in the gas phase at the surface (atmospheres), and m' is the mass-action constant for Reaction [I]. Since activities of C and 0 are not strictly proportional to concentrations, m' is not a true thermodynamic equilibrium constant but varies with carbon content.' 3) Mass Transport—If the reaction is to proceed at the gas-metal surface, as described above, dissolved carbon and oxygen in the liquid iron must come to the surface and gaseous carbon monoxide must move away from the surface. Details of the mass-transport mechanisms depend on the kind of system under consideration. For a stirred metal bath in contact with a CO gas phase, the transport of C and 0 to the surface can be described by 1 Do Mols CO evolved per sec = — 1/16— Do/do Agm (CO-Co*) = 1/12 Do/do Agm *(Co-Co*) [3] In this equation, Do and D, are the diffusion constants for oxygen and carbon in liquid iron, 6, and 6,. are the boundary-layer thicknesses, A,,,, is the

Jan 1, 1959

By A. H. Bell

DEEPEST hole in the earth, and deepest producing oil well in the world-such is well No. K.C.L. A-2, of the Continental. Oil Co., completed on April 12 in the San Joaquin valley about four miles west of Wasco, Calif. It penetrated the earth's crust to a depth of 15,004 ft.- almost three miles-a depth that exceeds by over 2200 ft. that of the previous record holder in western Texas. It is now producing oil from sands at a depth from 13,092 to 13,- 175 ft., which is about 1500 ft. deeper than the record formerly achieved in Louisiana. Continental's new well was bottomed in what is possibly Domengine-Avenal Eocene sand, and is producing from the Middle Miocene equivalent to the Rio Bravo sand.

Jan 1, 1938

By W. T. Turrall, D. Porter

THE crystal laboratory, Dept. of Physics, Massachusetts Institute of Technology, was confronted with the problem of obtaining a supply of optical grade calcium fluoride (CaF2) for use in growing synthetic CaFe2 crystals. A search of the known fluorspar deposits did not indicate that any quantity of optical spar could be obtained. Even the best material had to be sorted by hand to remove impurities. The process for growing CaF2 crystals developed by Professor D. C. Stockbarger of the Dept. of Physics, M.I.T., necessitates very pure feed materials. Exclusion of impurities is required, even in amounts detectable only spectrographically. The impurities occurred as minute inclusions of SiO2, BaSO4, CaCO3, FeS2, water or air. Crystals up to 4 in. in diam and weighing several pounds are made by the Harshaw Chemical Co. in Cleveland. Since the time required to grow a 4-in. crystal is about one week, and since the cost of manufacture is high, removal of impurities by any concentration method appeared practical. The mineral engineering section of the Dept. of Metallurgy undertook to investigate the possibility of concentrating clear optical fluorspar, -4 mesh +10 mesh, from a feed containing over 99 pct CaF2. Various innovations of the known methods of concentration were considered, but in each case the minute amount of impurities associated with the crystal produced such extremely small differences

Jan 1, 1952

By R. H. Hiltz, N. J. Grant

Solid-solution titanium-cerium alloys, cold-rolled to 0.010 in. thickness, and annealed, were internally oxidized to produce a fine dispersion of CeO2 in the titanium matrix. The oxidized alloys were cut into sheet stress-rupture specimens and tested for rupture life at 426°C, 538°C, and 648°C. There was noted an improvement in strength over that of pure titanium, the internally-oxidized alloys showing curves with a much flatter slope on the log stress—log rupture life plot, characteristic of the stable metal-metal oxide class of alloy. DURING the past 3 to 4-year period, considerable interest has been aroused by the potential offered by alloys based on the ultra fine dispersion of a hard insoluble phase in pure metals or solid-solution alloys for use at high temperatures. The impetus to the development and study of such alloys was provided by Irmann.1,2 through the success of the SAP alloy (pure aluminum containing about 12-14 volume pct of A12O3). Subsequent studies have thrown light on the true potential of this class of alloys in the remarkable stability of the structure after long-time exposure at high stresses and high temperatures.a-5 While success has been demonstrated in the special case of the A1-Al2O3 alloys, and more recently

Jan 1, 1959

H. H. Stoek, Scranton, Pa. (communication to the Secretary): Mr. Rothwell's condemnation of my paper on the International Correspondence Schools as not giving an impartial view of the whole field of such enterprises, because it was confined to the description of a single one, might be legitimate if I had undertaken or professed to do anything else than that which I was requested by the Secretary of the Institute to do—namely, to give an account of this particular institution. This is a sufficient answer to all his direct or implied criticisms upon my omission to mention either persons or organizations outside of the special limits set for me. Recognizing fully that personalities have no place whatever in the Transactions, I regret the necessity of making the following statement in answer to Mr. Rothwell's charge that I omitted to give due credit to Mr. Ewald, a former principal of the International Correspondence Schools. The Colliery Engineer School of Mines was started in 1891, and its first student was enrolled October 16, 1891. During the fall of the same year the mine-mechanical course was laid out along the same general line that had already been followed in the mining course. This mine-mechanical course was the foundation from which sprung the later developments of the several mechanical courses. The latest circulars of information of the International Correspondence Schools give the following as their distinctive features: (1) courses of instruction for particular occupations,

Jan 1, 1900

By A. D. K. Laird, John A. Putnam

This paper describes the application of x-ray theory to design procedures in connection with fluid saturation determinations during fluid flow experiments with porous media. A reliable and rapid method for calibrating the x-ray apparatuy is described. Extension of the method to fluid saturation determinations in three-fluid systems is described. INTRODUCTION In rerearch on oil production problems a method is required which will give quickly the quantity of each component of a fluid flow system present at any cross-section of a porous medium. The sample of porous medium under investigation is usually referred to as a core. The ratio of the volume of one component to the total fluid volume is defined as the saturation of the porous medium by that component. This ratio is generally given as per cent saturation. Some means of measuring saturation which have received consideration include: electrical conductivity of the fluids;1,2 emissions from radioactive tracers dissolved in the fluids; the radioactivity of silver caused by reflection of neutrons from hydrogen atoms in the fluids;' the attenuation of a microwave beam. the diminution and phase shift of ultrasonic wave trains.4,5 and the reduction in intensity of x-ray beams in passing through the fluids. X-rays have already been used with some success. Since every material has a different power to absorb x-rays, the reduction in intensity of an x-ray beam as it passes through a core depends on the fluids present. The strength of the emergent beam can be found by converting its energy into a measurable form such as heat or ionic current. or by its effect on a photographic plate or fluorescent screen. The beam strengths could be interpreted as quantities of known fluids in the core if, previously, these beam strengths had been identified with a known combination of the same fluids. With some fluid cornbinations it might be desirable to dissolve powerful x-ray absorbing materials in one or more of the fluids, to increase the differences in the beam strengths for various fluid saturations. Boyer, Morgan and Muskat6 have described a method of measuring two component fluid saturation. One component was air or water; the other. minerat seal oil in which was dissolved 25 per cent by weight of iodobenzene to increase its absorbing power. The x-ray source was a tungsten target tube operated at 43 kv potential. The beam emerging from the core was measured as ionic current flowing across an air-filled ionization chamber by means of an amplifying circuit and galvanometer. Another portion of the beam from the x-ray tube was passed through a metal plate and measured in another ionization chamber. This portion, called the monitor beam, was used as an indication of the performance of the x-ray tube. The galvanometer readings were calibrated against air-oil core saturations, gravimetrically determined. The method was apparently established by experimental means. In the present investigation the available theory of x-radia-tion was surveyed with a view to extending the usefulness of the method and to developing design procedures for its application to measurement of fluid saturation in porous media. Application of the theory permits prediction of relative meter readings to be expected for any combination of porous matrix, various saturating fluids and auxiliary filtering media. It is thus possible to calibrate the equipment in terms of fluid saturation by an indirect but rapid technique. The results of calculations based on x-ray theory indicate. and results of the saturation calibration technique confirm. that a valid measurement of the saturation of the core can be made for any two components and in some cases for three components. THEORY The strength of an x-ray beam, after it has passed through a distance. 1, of matter of density, p, and mass absorption coefficient, µ at a given wavelength, A, may be expressed by the absorption formula I = I0 e ...........(1) where I, represents the intensity of the incident x-ray beam and I is the intensity of the emergent beam. The expression e is called the transmission factor of the material. The variation of I,, with wavelength depends upon the materials through which the x-ray beam has previously passed and upon the spectral distribution of energy at the source of the x-radiation. A group of curves. called spectra. which show the variation of intensity with wavelength and x-ray tube voltage are given in Fig. 1. These curves represent the general radiation from a tungsten target tube. When the tube voltage is greater than 69.3 kv, the characteristic radiation of the tungsten is emitted and is superposed on the general radiation. At a given voltage the minimum wavelength A,,,,, at which energy can be emitted by an x-ray tube is given by the formula 12,340 xml. = ——..........(2) volts where A,.,,.. is in Angstrom units. The wavelength at which the spectra have maximum intensity a1so decreases with increasing x-ray tube voltaue. The area under each curve represents to an arbitrarv scale the total energy emerging from the x-ray tube for that voltage. The variation of µ with wavelength has been determined for many substances and may be found in such references as those by Compton and Allison7 and by Hodgman.8 The phenomenon of absorption is composed chiefly of the capture of photons by the atoms of the absorbing material with associated displacement of electrons, and of the scattering, or the deflection, of the photons by the atoms. Curves of these mass absorption coefficients show jump discontinuities. or absorption edges. at wavelengths which are short enough for the photons,

Jan 1, 1951

By John A. Putnam, A. D. K. Laird

This paper describes the application of x-ray theory to design procedures in connection with fluid saturation determinations during fluid flow experiments with porous media. A reliable and rapid method for calibrating the x-ray apparatuy is described. Extension of the method to fluid saturation determinations in three-fluid systems is described. INTRODUCTION In rerearch on oil production problems a method is required which will give quickly the quantity of each component of a fluid flow system present at any cross-section of a porous medium. The sample of porous medium under investigation is usually referred to as a core. The ratio of the volume of one component to the total fluid volume is defined as the saturation of the porous medium by that component. This ratio is generally given as per cent saturation. Some means of measuring saturation which have received consideration include: electrical conductivity of the fluids;1,2 emissions from radioactive tracers dissolved in the fluids; the radioactivity of silver caused by reflection of neutrons from hydrogen atoms in the fluids;' the attenuation of a microwave beam. the diminution and phase shift of ultrasonic wave trains.4,5 and the reduction in intensity of x-ray beams in passing through the fluids. X-rays have already been used with some success. Since every material has a different power to absorb x-rays, the reduction in intensity of an x-ray beam as it passes through a core depends on the fluids present. The strength of the emergent beam can be found by converting its energy into a measurable form such as heat or ionic current. or by its effect on a photographic plate or fluorescent screen. The beam strengths could be interpreted as quantities of known fluids in the core if, previously, these beam strengths had been identified with a known combination of the same fluids. With some fluid cornbinations it might be desirable to dissolve powerful x-ray absorbing materials in one or more of the fluids, to increase the differences in the beam strengths for various fluid saturations. Boyer, Morgan and Muskat6 have described a method of measuring two component fluid saturation. One component was air or water; the other. minerat seal oil in which was dissolved 25 per cent by weight of iodobenzene to increase its absorbing power. The x-ray source was a tungsten target tube operated at 43 kv potential. The beam emerging from the core was measured as ionic current flowing across an air-filled ionization chamber by means of an amplifying circuit and galvanometer. Another portion of the beam from the x-ray tube was passed through a metal plate and measured in another ionization chamber. This portion, called the monitor beam, was used as an indication of the performance of the x-ray tube. The galvanometer readings were calibrated against air-oil core saturations, gravimetrically determined. The method was apparently established by experimental means. In the present investigation the available theory of x-radia-tion was surveyed with a view to extending the usefulness of the method and to developing design procedures for its application to measurement of fluid saturation in porous media. Application of the theory permits prediction of relative meter readings to be expected for any combination of porous matrix, various saturating fluids and auxiliary filtering media. It is thus possible to calibrate the equipment in terms of fluid saturation by an indirect but rapid technique. The results of calculations based on x-ray theory indicate. and results of the saturation calibration technique confirm. that a valid measurement of the saturation of the core can be made for any two components and in some cases for three components. THEORY The strength of an x-ray beam, after it has passed through a distance. 1, of matter of density, p, and mass absorption coefficient, µ at a given wavelength, A, may be expressed by the absorption formula I = I0 e ...........(1) where I, represents the intensity of the incident x-ray beam and I is the intensity of the emergent beam. The expression e is called the transmission factor of the material. The variation of I,, with wavelength depends upon the materials through which the x-ray beam has previously passed and upon the spectral distribution of energy at the source of the x-radiation. A group of curves. called spectra. which show the variation of intensity with wavelength and x-ray tube voltage are given in Fig. 1. These curves represent the general radiation from a tungsten target tube. When the tube voltage is greater than 69.3 kv, the characteristic radiation of the tungsten is emitted and is superposed on the general radiation. At a given voltage the minimum wavelength A,,,,, at which energy can be emitted by an x-ray tube is given by the formula 12,340 xml. = ——..........(2) volts where A,.,,.. is in Angstrom units. The wavelength at which the spectra have maximum intensity a1so decreases with increasing x-ray tube voltaue. The area under each curve represents to an arbitrarv scale the total energy emerging from the x-ray tube for that voltage. The variation of µ with wavelength has been determined for many substances and may be found in such references as those by Compton and Allison7 and by Hodgman.8 The phenomenon of absorption is composed chiefly of the capture of photons by the atoms of the absorbing material with associated displacement of electrons, and of the scattering, or the deflection, of the photons by the atoms. Curves of these mass absorption coefficients show jump discontinuities. or absorption edges. at wavelengths which are short enough for the photons,

Jan 1, 1951

By L. Ibagos S., T. Balberyszski

The volumetric flow rate and the initial concentration of the copper sulfate solution influence the rate of reaction and, hence, the precipitation efficiency in a continuous launder cementation system. Using a model of such a system it was found that the precipitation efficiency is related to the two process parameters by the approximate expression [ log [1-n] = -[0.072 co 2.91 e – 0.511c o Q 1.15 ] N Q] where c is the initial concentration, Q, is the volumetric flow rate and N is the number of launders in the system. This expression agrees with an equation developed for the rate of the cementation process if it is assumed that the exponential factor represents the change in the surface area with concentration and the exponents 2.91-and 1.15 relate the hydrodynamic conditions and the surface concentration to co and Q. The experimental results are used to determine the values of a Precipitation Coefficient for any volumentric flow rate and initial concentration of solution. Knowing the Precipitation Coefficient, the total volume of launders that will result in a given precipitation efficiency can be calculated. It is established that maximum precipitation efficiencies are obtained for initial concentrations between 6.0 and 7.0 gpl and volumetric flow rates of approximately 350 m3 /hr Good agreement between calculated and actual launder volumes is obtained for a number of industrial operations for which a comparison is made.

Jan 1, 1973

By F. G. Stone

A strain anneal process has been developed for the production of iron tensile test specimens, the gauge length consisting substantially of a single crystal. Since the method has been quite successful and the results of general interest, the process will be described in detail. The essential feature of the method is the continuous, slow increase of furnace temperature during the grain growth annealing treatment. Briefly, the procedure is as follows: I. Heat machined bars to 950°C in vacuum, hold I hr, furnace cool. 2. Strain to 3.5-3.8 pct elongation (axial loading). 3. Anneal, continuously raising furnace temperature from 450 to goo°C at a rate of so0 per day. 4. Hold at 900°C for 100 hr, furnace cool. Tensile test bars with a 1/4- X I-in. gauge section have been machined from 35 in. Armco iron plate and from 3/8 in. rounds of Puron, a high purity laboratory iron. The axes of the test bars were parallel to the rolling direction. During the machining operation the bars were polished in the lathe with No. 600 emery paper, and this polished surface proved satisfactory for subsequent macrographic examination. A micrographic examination of the materials showed that both were high in FeO inclusions, those of the Puron being smaller but much more numerous. An initial vacuum anneal of I hr at 950°C followed by furnace cooling resulted in a ferritic grain size of ASTM No. 3 for Armco and No. I for Puron. Special heat treatments which reversed these initial grain sizes produced no marked improvement in single crystal production after subsequent treatments. The strain for subsequent grain growth was determined by measuring the decrease in diameter of the tensile bar during elongation. The change in diameter could be measured with a micrometer to +0.0001 in., corresponding to an accuracy of 0.08 pct for the elongation. The accuracy of the diameter measurement is also dependent on grain size because of surface roughening during elongation, and for this reason, a No. 3 grain size is preferable. Optimum grain growth was obtained for strains between 3.5 and 3.8 pct elongation. Once this critical range had been cstablished, all tests were held within it, and thus only meager data were obtained on grain growth following strains outside this range. In general, grain size decreased with increasing strain to about 5.5 pct elongation. Grain growth was occasionally ohserved with less than 3.5 pct elongation although this may have been the result of error in measurement. The program control device for the grain growth anneal consisted of a I rpm motor and worm gear drive, operating the dial shaft of a pyrometer controller through a pulley. Dial speeds of 33 and 50°C per day were tried, but the results at the slower speed were not sufficiently better to warrant the increased furnace time. The furnace tube was evacuated at intervals during the run and kept sealed the remainder of the time. When the controller reached 900°C, it was stopped and the temperature held for 100 hr. This eliminated most of the numerous minute crystallites of about 0.5 mm dimension usually visible on the etched surface of the single crystal. Since recrystallization occurs at the A3 point, the top temperature of 900°C provided a 10"

Jan 1, 1949

By Edward B. Cook

INTRODUCTION. THE installation of the Gayley Dry-Air process appealed specially to the management of the Warwick Iron & Steel Co., for the. reason that for fifteen years records had been kept at the works of the company, showing the amount of water entering the furnace in the form of aqueous vapor, and careful observations had been made of its effect upon the working of the furnace. Some years had proved much worse in their effect than others, on account, not only of excessive moisture, but also of great variation in the moisture from day to day, and sometimes within a few hours. It had been found impossible to. make a satisfactory percentage of high-silicon foundry-iron in summer, even on high fuel; and for some years the endeavor had been made so to arrange the sales that, during July and August, only a small percentage of the iron produced would be required to carry more than 2 per cent. of silicon. Our larger furnace, running on basic iron, year after year, produced in February a tonnage 20 per cent. higher than in August, on a much lower fuel-consumption, while, at the same time, the summer months were marked by ? messes," tuyeres closed by slips, and other irregularities, constituting serious additional business losses. It will be easily understood, therefore, that the records made at the Isabella furnace after the installation of the dry blast in 1904 possessed special interest, and were closely watched by us. On the basis of our own experience, we argued that if the moisture could be kept low, and also uniform, the cost of installation would be more than justified. The subject was brought before our Board of Directors in the fall of 1905; and in the spring of 1906 it was decided to install a plant of sufficient capacity to treat 70,000 cu. ft. of air per min., an amount

Nov 1, 1908

GENTLEMEN : Herewith are submitted reports for the calendar year 1933 of your Treasurer and the Chairmen of the following standing committees: Finance, Admissions, Membership, Papers and Publications, Library, and MINING AND METALLURGY. TO these reports you are referred for additional details of the year's activity. Finances.-Income for 1933 from all sources totaled $121,690 com- pared with $138,331 in 1932. Incidentally, this exceeded the income as estimated in the budget by $7,190; the largest item being a "surplus" of $3,316 over the budget expectancy as to member dues. As compared with 1932 the most important items of shrinkage in income were $9,000 from dues and initiation fees; $5,500 from the magazine, MINING AND METALLURGY; and $2,500 from sales of publications other than the magazine.

Jan 1, 1934

By Reino Kurppa

The Pyhäsalmi mine of the Outokumpu Co. is located in central Finland (Fig. 1). The deposit was discovered in the autumn of 1958. Construction of the mine was started a year later, and production began on Mar. 1, 1962 (Fig. 2). At present, 750,000 metric tons (mt) of ore and a nearly equal amount of country rock are mined annually. Slightly over one-half million tons of various concentrates are produced per year, of which 85% is pyrite concentrate, 10% zinc concentrate, and 5% copper concentrate. The pyrite concentrate is treated in the company's pyrite smelter,1 yielding elementary sulfur, sulfur dioxide, and iron-oxide cinders, as well as electric power. Thus all the sulfides, totaling 75% of the ore, are of economic value. This is a fact which had a bearing on the development of the stoping method. GEOLOGY The ore is of breccia type containing fragments of country rock of varying sizes. It is coarse-grained pyrite ore containing sphalerite and chalcopyrite as a matrix between the pyrite grains. Only small amounts of pyrrhotite have been observed in certain marginal parts of the orebody. The ore averages 0.85% Cu, 3.0% Zn, 38% S, and 33% Fe. The orebody extends from the surface down to at least 500 m, which is the lowest level from which present information has been obtained. Horizontally, the orebody is 650 m long. It is 75 m wide at its central part, narrowing towards the ends (Fig. 3). At a depth of 115 m, the orebody suddenly narrows down to a thickness of 25 to 30 m. In the northern part of the orebody, the dip is 50° to 70°, but elsewhere it is almost vertical (Fig. 3).

Jan 1, 1969

By J. S. Bowles

THE martensite transformation in lithium, dis- covered by Barrett,' has been studied extensively by X-ray techniques by Barrett and Trautz,² and Barrett and Clifton.V he present paper reports the results of an investigation into the metallographic characteristics of lithium martensite. Such an investigation has not been carried out before. The spontaneous transformation in lithium consists of a change from a body-centered cubic to a close-packed hexagonal structure with the hexagonal layers in imperfect stacking sequence." As far as is known at present, this transformation can be regarded as being crystallographically equivalent to the body-centered cubic to close-packed hexagonal transformation that occurs in zirconium,5 although stacking errors have not been reported in zirconium. From a study of the orientation relationships in zirconium, Burgers5 as proposed that the martensite transformation, b.c.c. to c.p.h., occurs by a heterogeneous shear on the system (112) [111]. The crystal-lographic principle underlying this proposal is that the configuration of atoms in the (112) plane of a b.c.c. structure is exactly the same as that in the (1010) plane of a close-packed hexagonal structure based on the same atomic radius. The pattern in 2v2 both these planes is a rectangle d X 2v2d where v3 d is the atomic diameter. Thus a close-packed hexagonal structure can be built up from a body-centered cubic structure by displacing the (112) planes relative to each other.* This mechanism leads to orientations that can be described by the relations: (110)b.c.e. // (0001)c,p.h.; [111]b.c.c. // [1120]c.p.h Observations confirm these relations. In zirconium, Burgers' measurements indicated an angle of 0" to 2" between the close-packed directions, while Barrett's measurements on lithium indicated an angle of 3". According to the Burgers' mechanism, the martensite habit plane for this transformation would be expected to be the (112)b.c.c. plane, for this plane would not be distorted by the transformation. One of the purposes of this investigation was to find out whether the observed lithium habit plane agrees with this prediction of the Burgers' mechanism. Experimental Procedure Materials: The lithium was from the same purified ingot used by Barrett and Trautz.² The Bridgman technique was used to produce single crystals. To maintain a temperature gradient in the melt, during the production of these crystals, it was necessary to use a steel mould with a wall thickness of only 0.015 in. Metallographic Techniques: Lithium specimens could be given an excellent metallographic polish by swabbing them gently with cold methyl or ethyl alcohol.? The best results were obtained with methyl alcohol saturated with the reaction product, lithium alcoholate. With higher alcohols the reaction became progressively slower and the attack became an etch pit attack rather than a polish attack. Butyl and amyl alcohols were used for macroetching. After polishing, it was necessary to remove all traces of alcohol from the specimens; otherwise, on subsequent quenching in liquid nitrogen, the alcohol froze to a glassy film. The alcohol was removed with dry benzene. The benzene in turn had to be removed before quenching, but since it does not react with lithium it could be allowed to evaporate. The specimens could then be quickly quenched before they began to tarnish. This operation could be carried out in air on all but excessively humid days when it was advisable to use an atmosphere of dry nitrogen or argon. For examinations at room temperature, the specimens could be transferred directly from the benzene bath into a bath of mineral oil. In mineral oil the specimens oxidized slowly by the diffusion of oxygen through the oil but the structure remained visible for about an hour. Lithium Martensite: Specimens prepared in the manner described above transformed spontaneously to martensite with an audible click when quenched into liquid nitrogen; i.e., M, was above the boiling point of nitrogen (77°K). The disparity between this result and the M, temperature of 71°K, found by Barrett and Trautz, is probably to be attributed to the large grain size and freedom from mechanical deformation of the specimens used in the present work. The relief effects produced by the transformation did not disappear when specimens were quenched from liquid nitrogen into mineral oil at room temperature. This permitted the microstructures to be studied at room temperature where, of course, the martensitic phase was no longer present. Typical micrographs of lithium "martensite" made at room temperature are reproduced in figs. 1, 2, and 3. As anticipated by Barrett and Trautz, the microstruc-

Jan 1, 1952

By R. W. Regehr, R. A. Burmeister

Epitaxial growth of GaAs 1-xPx on germanium substrates was achieved using an open tube vapor transport system. The compositional range of 0.3 < x < 0.4 was examined. The best results were obtained with (311) orientation of the germanium substrate. The physical and chemical properties of the resulting layers were investigated using several techniques. Spectrographic analyses of the layers indicate substantial incorporation of germanium into the GaAs t-X Px layer. Evidence is presented which indicates that this incorporation occurs via a vapor phase transport process rather than by solid phase dijfu-sion. Electrical measurements suggest that the germanium thus incorporated behaves predominantly as a deep donor in the compositional range of 0.33 < x * 0.40 and has a deleterious effect upon the luminescent properties of GaAs1-x Px. The increasing technological importance of GaAs1-xPx for use in light-emitting devices has led to an evaluation of several aspects of existing growth processes. The method most commonly used to prepare GaAs1-xPx for electroluminescent device applications is vapor phase epitaxial growth on GaAs substrates.&apos;-4 In a typical electroluminescent diode structure the active region of the diode is entirely within the epitaxial layer and thus the electrical properties of the substrate are relatively unimportant since it is effectively a simple series resistance (assuming hetero-junction effects to be negligible). The use of germanium rather than GaAs as the substrate material is of interest for several reasons. First, GaAs of reasonable structural quality has been epitaxially grown on germanium4-2 and it is reasonable to expect that GaAs1-xPx could subsequently be deposited on the GaAs layer. Second, germanium substrates are readily available with both lower dislocation densities and larger areas than GaAs. Finally, single crystals of germanium are more economical than GaAs single crystals. The principal objective of the present investigation was to test the feasibility of growing GaAs1-xPx epi-taxially on germanium substrates, and to evaluate the properties of such layers with regard to electroluminescent device requirements. The approach used was to a) demonstrate epitaxial growth of GaAs1-xPx on germanium, and b) characterize the relevant structural, electrical, and optical properties of the GaAs1-xPx layers. The possibility of germanium incorporation into the grown layers was of special interest since there was some indication of this in previous studies of GaAs growth on germanium.5&apos;11,12 Although a study of the electrical properties of germanium in GaAs1-xPx was not an intent of this investigation, several features of the electrical properties of the layers grown in the present study which appear to be due to germanium are described. EXPERIMENTAL PROCEDURE The open-tube vapor transport system used for the epitaxial growth of GaAs1-xPx is illustrated in Fig. 1. This system utilizes the GaC1-GaC13 transport reaction and is similar in most respects to the larger system described elsewhere.&apos; The germanium substrates were n-type, with a resistivity of 40 ohm-cm (Eagle-Picher Co.). These were cut to the orientations of {100), {111), and (3111, and were mechanically polished and chemically etched in CP-4 (5 min at 0°C) prior to growth. In some cases, a GaAs substrate was employed in addition to the germanium. The orientation of the latter was {loo}, and they were also mechanically polished and chemically etched prior to growth. The initial composition of the deposited layer was pure GaAs. After approximately 10 microns of GaAs was deposited on the germanium substrate, the phosphorus content of the layer was gradually increased over a distance of approximately 15 microns to the desired concentration and maintained at this value throughout the remainder of the growth. Typical operating parameters used during growth are given in Table I. Selenium was used as a n-type dopant in several runs to facilitate comparison of the electrical properties of the layers grown on germanium with those of layers grown on GaAs substrates, which are usually doped with selenium. The concentration of H2Se in the gas phase was adjusted to a value which would normally yield a carrier density of 1 to 5 x 101 7 at room temperature in layers grown on GaAs substrates. The terminal surfaces of the epitaxial layers were examined by optical microscopy for structural characteristics. Laue back-reflection photographs (Cu radi-ation) were also made on the terminal surface to verify the epitaxial nature of the deposit. After these steps

Jan 1, 1970