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By S. R. B. Cooke, C. E. Thurston, G. Kudo

The trend toward utilization of low grade iron ores means that more efficient methods must be developed for their concentration. The collecting ability of fatty acids derived from fish oils has been extensively investigated by Cooke.' Tuna oil, a byproduct of the tuna canning industry, is one of the lower priced fish oils. Utilization of tuna oil fatty acids as collectors in the flotation of iron ore might be economically feasible under certain market conditions, especially if their efficiency were high. Crude or unfractionated tuna oil fatty acids, and five fractions derived therefrom, were tested for their ability to concentrate a commercial specularite ore from northern Michigan. A commercial fatty acid derived from tall oil, and commonly used in nonsulfide flotation, was used as a reference. The crude fatty acids were obtained by simple saponification of tuna oil. Fractions A and B were obtained by acetone precipitation of the crude acids at -5O and -2S°C, respectively. Fraction C was obtained by a partial fractional distillation at 12S°C and at a pressure of 3y in a centrifugal molecular still in order to remove the shortest and longest chain fatty acids of tuna oil as well as oxidation products present in the original mixture. Fractions D and E were prepared by a chilling process in order to precipitate the unwanted saturated fatty acids. Yields and iodine values of the materials used are listed below: The seven samples were used as collectors in a laboratory procedure patterned after the commercial process for flotation of Michigan specularite ore. The outline of the procedure is that previously described1

Jan 1, 1962

Jan 4, 1950

By A. S. Emanuel

A correlation has been developed for calculating the phase behavior of, gas-condensate systems at reservoir conditions. The correlation is based on the principle of corresponding states and has been coded for an IBM 7094. Experimental K-values were determined for several gas-condensate systems at reservoir conditions to evaluate various semi-empirical parameters of the correlation. The approximate range of application of the correlation is 150 to 300F and 1,500 to 6,000 psi. INTRODUCTION The rapid development of digital computers during the past several years has made feasible the calculation of hydrocarbon phase behavior by methods based on rigorous thermodynamic principles. Good correlationsl have been developed for low to moderate pressures, but these techniques have not yet been extended successfully to reservoir fluids at high pressures. Consequently, the determination of phase behavior of oil and gas systems at reservoir conditions is still based almost entirely on generalized data correlations or on experimental studies of the fluid in question. While these methods have been used successfully many times, they do have inherent limitations that restrict their applicability. Generalized correlations, such as the NGShlA K-charts, are limited to the range of pressure, temperature and components for which the data were determined. The accuracy of these correlations is often questionable because the effect of total system composition is not well defined. Experimental studies offer a reliable method for determining phase behavior, but usually the studies are costly and time consuming. Recently, Leland and co-workers presented a new approach to calculating phase behavior from the principles of corresponding states.6-8 Corresponding states methods determine the thermodynamics properties of a given system by comparison with a reference substance whose properties are known. The accuracy of this approach depends on close chemical and structural similarity between the reference substance and the system in question and between components within the system itself. For high accuracy, it is usually necessary to correct for chemical and structural dissimilarities. In principle, however, the corresponding states method should be no less accurate at high pressures than at low pressures, provided reference substance properties are known. This paper describes an empirical modification of the basic correlation proposed by Leland, et al.6 for the specific purpose of calculating the phase behavior of gas-condensate fluids at reservoir conditions. The modified correlation, which has been programmed for an IBM 7094, may be used for either approximate or precise determination of fluid behavior depending on the amount of analytical and, experimental data available for the system. BASIC THEORY The basic theory of the corresponding states phase equilibria correlation was first published by Leland, Chappelear and Gamson.6 Subsequently, Leland, Chappelear and Leach published methods for improving the accuracy of the original theory.7-9 The aim of the correlation is to calculate the K-value of each component of a given system as a function of pressure, temperature, and over-all composition, where Once the K-values are known, the phase behavior may be determined directly by an appropriate flash calculation. The basic equation for calculating component K-values was taken from the work of Joffe. 4 For any component i of a mixture, the K-value is given by

Jan 1, 1969

By Arthur F. Wendt

The earliest knowledge of copper-ores in the Southwest was derived from the Mexicans, who, in the latter part of the last century, discovered and worked the Santa Rita copper mines, now situated

Jan 1, 1887

By G. K. Manning, C. H. Lorig

TWO metallurgical tools have acquired wide use within the past several years as a means of studying the transformation characteristics of steel. One is a technique used first by Bain and Davenport for determining the transformation characteristics of a steel at constant temperature; the second is the end-quench hardenability test. Constant-temperature transformation curves like those of Bain and Davenport have done much to rationalize the metallography of steel; however, in commercial practices, constant-temperature transformation is seldom encountered, therefore only rarely can such curves be directly applied. The real reason for the determination of such curves lies in the fact that they provide a way of thinking about transformation that is both convenient and productive. The end-quench hardenability test is a more practical means of studying transformation, for, by correlating positions on the hardenability bar with shapes of different masses, an almost direct application of the results can be made. Unfortunately, the end-quench test, though practical, can do very little toward improving the metallurgists' way of thinking about transformation. These two metallurgical tools, dealing with precisely the same phenomenon, should be very closely associated in metallurgists' minds. Actually, they are frequently pushed into separate mental corners and considered as being more or less distinct and unrelated. The reason for this is that no strong connecting link between them has been developed. An attempt is sometimes made to relate these two tools by projecting the critical cooling rate on the isothermal transformation plot as illustrated in Fig. I. The critical cooling rate is considered as a constant rate-though in practical applications, cooling rates are never constant—and this constant cooling rate is given uniform significance from the Ae temperature down to the temperature of initial transformation. A little thought indicates the errors of such a procedure. Certainly the time interval spent just below point A of Fig. I cannot be as effective in promoting nucleation as is the time interval spent just above point B. Yet the procedure represented in Fig. I considers all the time spent between temperatures A and B to be just as effective in promoting nucleation as though all the time were spent at temperature B. Furthermore, change the shape of the isothermal curve between points B and C in any way desired, and the required critical cooling rate is not changed one iota. This cannot possibly be true. Such a way of thinking about critical cooling rates not only is incapable of giving any results that are quantitatively satisfactory but is likely to give very misleading qualitative results.

Jan 1, 1947

By G. K. Manning, C. H. Lorig

TWO metallurgical tools have acquired wide use within the past several years as a means of studying the transformation characteristics of steel. One is a technique used first by Bain and Davenport for determining the transformation characteristics of a steel at constant temperature; the second is the end-quench hardenability test. Constant-temperature transformation curves like those of Bain and Davenport have done much to rationalize the metallography of steel; however, in commercial practices, constant-temperature transformation is seldom encountered, therefore only rarely can such curves be directly applied. The real reason for the determination of such curves lies in the fact that they provide a way of thinking about transformation that is both convenient and productive. The end-quench hardenability test is a more practical means of studying transformation, for, by correlating positions on the hardenability bar with shapes of different masses, an almost direct application of the results can be made. Unfortunately, the end-quench test, though practical, can do very little toward improving the metallurgists' way of thinking about transformation. These two metallurgical tools, dealing with precisely the same phenomenon, should be very closely associated in metallurgists' minds. Actually, they are frequently pushed into separate mental corners and considered as being more or less distinct and unrelated. The reason for this is that no strong connecting link between them has been developed. An attempt is sometimes made to relate these two tools by projecting the critical cooling rate on the isothermal transformation plot as illustrated in Fig. I. The critical cooling rate is considered as a constant rate-though in practical applications, cooling rates are never constant—and this constant cooling rate is given uniform significance from the Ae temperature down to the temperature of initial transformation. A little thought indicates the errors of such a procedure. Certainly the time interval spent just below point A of Fig. I cannot be as effective in promoting nucleation as is the time interval spent just above point B. Yet the procedure represented in Fig. I considers all the time spent between temperatures A and B to be just as effective in promoting nucleation as though all the time were spent at temperature B. Furthermore, change the shape of the isothermal curve between points B and C in any way desired, and the required critical cooling rate is not changed one iota. This cannot possibly be true. Such a way of thinking about critical cooling rates not only is incapable of giving any results that are quantitatively satisfactory but is likely to give very misleading qualitative results.

Jan 1, 1947

By R. W. Raymond

THE absence of a convenient glossary of terms connected with mining and metallurgy has long been felt by the general public. It is to meet this want, not to furnish a technical manual for experts, that the following glossary has been prepared. It originated in an attempt on my part to revise for publication the manuscript of a compilation prepared from the appendix of Yale's work on Mining Titles and one or two other sources, to serve as an appendix to a new work on mining law, about to be published by Mr. H. N. Copp, of Washington, D. C. This revision soon assumed, contrary to my original intention, the proportions of a reconstruction; and with the consent of Mr. Copp, and for the purpose of receiving from my fellow-members valuable aid, I presented my still incomplete work as a paper at the Lake Superior meeting of the Institute, inviting from any quarter suggestions of new terms or better definitions to be incorporated in the glossary before its final publication. This invitation was so widely and generously responded to, that I cannot undertake to make in this place individual acknowledgments to those members of the Institute, and professional colleagues outside of it, who have favored me with assistance and advice. The labor bestowed upon this paper since its presentation at the Lake Superior meeting has considerably exceeded that of its first preparation, as may be inferred from its great increase in length, as well as the numerous alterations which it has undergone. It could certainly be still further enlarged and improved; but I think a comparison of it with any of the glossaries of the same class now in print will show, at least, that it is an advance upon what has hitherto been accomplished. 1 shall be grateful, however, for further criticisms and suggestions; and I purpose at some future time to incorporate in a supplementary paper the results of such additional collections or corrections as I may obtain. To avoid too great prolixity, I adopted at the outset the following general principles: 1. To include the most important technical words and phrases used by American miners and metallurgists, or occurring in English books and periodicals.

Jan 1, 1881

By F. D. Rosenthal, F. J. Dunkerley, G. J. Mills

Activities, free energies, and heats and entropies of mixing of liquid Pb-Zn alloys have been obtained by the electrode-potential method between 400° and 650°C. The large positive deviations observed from Raoult's law are in agreement with the phase diagram, which indicates a wide immiscibility field. A vapor-pressure method was used to extend the activity measurements to 900°C, allowing the maximum of the immiscibility gap to be estimated by thermodynamic calculation. Data on the mono-tectic and eutectic points compare favorably with previously existing work. SEVERAL long-standing methods have been in use for the study of phase diagrams from measurement of the activities of the component metals.' The use of thermodynamic analysis for interpreting equilibria data is comparatively recent, however. Such analysis is usually undertaken by first evaluating the principal thermodynamic functions as, for example, the enthalpy, entropy, and free energy of the alloy constituents. These, in turn, quite often can be correlated with the interatomic potential energies and atomistics of the system, from which a clearer understanding of the causes leading to deviations from ideal behavior is gained. The present study of liquid Pb-Zn alloys is concerned with a determination of these quantities by electrode-potential and vapor-pressure measurements, using these values in calculations involving phase equilibria and to obtain a theoretical insight into an alloy system exhibiting strong positive deviations from ideal metallic solution. A considerable portion of the previously reported work is based on thermal analysis. Supplemented by optical studies of solid alloys, these techniques have revealed the essential nature of the immiscible mixtures that are formed. It is difficult, however, using the phase-

Jan 1, 1959

By C. M. Tucker, K. R. Van Horn, W. P. Sykes

Recent investigations of the molybdenum-carbon alloys have been reported by Becker and Ebertl,‡ Westgren and Phragmén2, T. Takei3, and H. Tutiya4. Takei3 studied the Mo-C system by employing metal-lographic and X-ray methods, and the other publications described the determination of the crystal structure of the molybdenum carbides. In exploring this system by a technique previously applied to the tungsten-carbon series5, the results of Takei were confirmed with two definite exceptions; i.e., first the composition of the eutectic, and second the nature of the carbon-rich intermediate phase. Consequently, a more thorough examination of the molybdenum-carbon constitution was initiated in an effort to correlate the data supplied by the microstructures, diffraction patterns and chemical analyses. Metallographic Investigation A briquette of molybdenum powder when heated in a carburizing atmosphere at 1500" to 1600" C. for several hours develops the carbon-rich layer shown in Fig. 1. The carburization was accomplished by placing the briquette in a carbon tube, which was heated in the hydrogen atmosphere of an alundum muffle wound with tungsten resistor. While the macrostructure indicates two distinct shells, and suggests the possibility of two carbon-rich phases, no evidence of this condition could be detected by the microscope, which revealed but one high-carbon constituent. This carbide forms next to the molybdenum as a relatively dense, light-colored zone (Fig. 2) which passes abruptly into an outer layer of spongy texture. As will be noted later, only one intermediate phase was observed in the X-ray photograms prepared of different locations in the carburized zone. The metallographic structure at the inner border of the shell, reproduced in Fig. 3, shows a marked porosity accom-

Jan 1, 1935

By C. M. Tucker, K. R. Van Horn, W. P. Sykes

Recent investigations of the molybdenum-carbon alloys have been reported by Becker and Ebertl,‡ Westgren and Phragmén2, T. Takei3, and H. Tutiya4. Takei3 studied the Mo-C system by employing metal-lographic and X-ray methods, and the other publications described the determination of the crystal structure of the molybdenum carbides. In exploring this system by a technique previously applied to the tungsten-carbon series5, the results of Takei were confirmed with two definite exceptions; i.e., first the composition of the eutectic, and second the nature of the carbon-rich intermediate phase. Consequently, a more thorough examination of the molybdenum-carbon constitution was initiated in an effort to correlate the data supplied by the microstructures, diffraction patterns and chemical analyses. Metallographic Investigation A briquette of molybdenum powder when heated in a carburizing atmosphere at 1500" to 1600" C. for several hours develops the carbon-rich layer shown in Fig. 1. The carburization was accomplished by placing the briquette in a carbon tube, which was heated in the hydrogen atmosphere of an alundum muffle wound with tungsten resistor. While the macrostructure indicates two distinct shells, and suggests the possibility of two carbon-rich phases, no evidence of this condition could be detected by the microscope, which revealed but one high-carbon constituent. This carbide forms next to the molybdenum as a relatively dense, light-colored zone (Fig. 2) which passes abruptly into an outer layer of spongy texture. As will be noted later, only one intermediate phase was observed in the X-ray photograms prepared of different locations in the carburized zone. The metallographic structure at the inner border of the shell, reproduced in Fig. 3, shows a marked porosity accom-

Jan 1, 1935

By William H. Emmons

CONTENTS. [ ]

Jan 1, 1913

By R. M. Treco

THE thermal expansion of pure beryllium was first investigated by Hidnert and Sweeneyl in 1925 on a single cast specimen stated to be of 98.9 pct purity. A study of the coefficients of expansion by X-ray methods has recently been made by P. Gordon' on powder obtained from the Brush Beryllium Co. assaying 97 wt pct beryllium with about 2 wt pct oxygen as an impurity. The present work pertains to about the highest purity metal obtainable from the Brush Beryllium Co. This metal was in the form of lumps which were remelted and cast in a high-vacuum induction furnace. Expansion data in this paper deal with beryllium extruded into bars of rectangular cross-section 4x1/2 in. and the anisotropic expansivity of a large cast single crystal. Analysis of the cast metal after extrusion indicated a beryllium assay of 99.28 pct. Impurities were 0.170 pct Fe, 0.140 pct Al, 0.014 pct Mg, 0.086 pct Si, 0.020 pct Cu, 0.020 pct Mn, 0.007 pct Ni, 0.007 pct Ca, 0.080 pct C, 0.179 pct 0, (as BeO). Part I—Extruded Metal Thermal expansion measurements were obtained with a fused quartz-tube differential type dilatom-eter3 on specimens cut from the extruded sections in longitudinal and transverse directions. Specimens were machined to a diameter of 0.250 in. and a length of 3.000 in. One sample from each direction was vacuum annealed for 1 hr at 800°C. The dilatometer tube was placed in a vertical tube furnace having a uniform temperature zone which was twice the length of the sample. Average time for a complete thermal cycle to 500°C was 18 hr. Temperatures were observed with two chromel-alumel thermocouples attached to the sample about 1 M in. apart. The accuracy of temperature measure-ment was ± 0.25°C. An argon gas atmosphere sur-rounded the specimen to prevent oxidation of the beryllium. Samples were identified as shown in table I. Results - The original plan included measuring expansion up to 1000°C, but the first two runs on sample No. 5 showed that a permanent contraction occurred from

Jan 1, 1951

By James B. Austin

Growth of the Society When the Institute was born in May, 1871, it was given the name American Institute of Mining Engineers. Yet from its conception a few months earlier, its genetic code clearly carried the message that metallurgy was equal in importance to mining. Thus, the "call" for the initial meeting, which was sent out in April of that year by three mining engineers, Eckley B. Coxe, R. P. Rothwell and Martin Coryell, gave this first objective of the proposed organization as: "the more economic production of the useful minerals and metals." And this call concluded: "Anyone who may have devoted himself to a particular subject connected with either mining or metallurgy, and who may be possessed of new facts in reference to it, would greatly aid in furthering the objects of the proposed association by preparing a paper giving the results of his experience." In response to this call, a group of 22 men assembled in Wilkes-Barre, Pa., for a 3-day meeting beginning May 16, 1871. On the first day, a set of 20 "Rules" was adopted, of which Number 8 read, in part: "The words mining engineers in these rules comprehend engineers connected with mining and metallurgy." On the second day, 18 officers were elected, of whom nine were not present. Moreover, as if to emphasize that the words about metallurgists were to be taken seriously, one of those elected in absentia was the president, David Thomas, a Welshman who had founded the Thomas Iron Co. and who built the first anthracite-fired, hot-blast furnace in this country. The second meeting of the Institute, held in Bethlehem, Pa., in August, had a more metallurgical flavor, and the third meeting, in November, was held in what was then one of the great steel-making centers of the country - Troy, N. Y. This was the home of the Albany and Rensselaer Iron and Steel Co., which held the American rights to Bessemer7s machinery patents. And it was here that the great American steel master, Alexander L. Holley, carried out a series of experiments that led to improvements in the design and method of operation of the Bessemer vessels. It was at this meeting that Holley and Henry Marion Howe, then a "student" at the Albany and Rensselaer plant, were admitted to membership. Four years later, Holley was elected president of the Institute. Clearly, metallurgy

Jan 1, 1971

Jan 1, 1905

By C. W. Mueller, P. H. Robinson

A technique was developed for depositing single -crystal films of silicon on single-crystal sapphire substrates via the pyrolytic decomposition of SiH4/H2 mixtures. Electron diffraction and X-ray Laue reflection examinations of these films revealed single-crystal patterns. These films were characterized by measuring conductivity type, thickness, resistivity, and Hall mobility. Chemical etching, dislocation staining, and electron-microscopy examination have indicated the presence of low-angle grain boundaries and microtwinning in the silicon films. The role of the sapphire substrate with respect to its quality, orientation, surface finish, and thermal and chemical treatment was investigated. Hall mobility as a function of sapphire orientation was measured. A mobility equal to 88 pct of bulk silicon mobility was attained. Insulated-gate field-effect transistors which have a transconductance of 4000 pmho at 6 ma were fabricated using these films. THE technology of the fabrication of microelectronic circuits with active and passive components directly on a single wafer of semiconductor material has attained a high degree of perfection during the last few years. One inherent difficulty with the single-wafer approach has been undesirable coupling between components arising from the common base material. Several techniques have been developed for minimizing this coupling and obtaining good electrical isolation between components; however, these result in extra capacitance being added to the circuit. The extraneous capacitance of the connecting leads, resistors, and capacitors degrade circuit performance and limit the high-frequency operation of these circuits. Recently there has been considerable interestl-3 in the deposition of silicon films upon insulating substrates. The use of silicon as the semiconductor allows the subsequent utilization of the large amount of technology which has been developed for silicon for the fabrication of good active components. A sapphire substrate supplies an excellent insulating material which at the same time gives a thermal-conductivity improvement of an order of magnitude over glass-type substrates. This paper will describe the results obtained for the deposition of single-crystal silicon layers upon single-crystal sapphire substrates as well as the characterization of these films. I) APPARATUS The 'system used for the growth of silicon films on sapphire substrates by means of the pyrolysis of SiH4/H2 mixtures is shown in Fig. 1. The all-quartz reaction chamber is water-cooled and includes a quartz optical-flat window for use in conjunction with a 5 kw, 2.5 Mc per sec constant-temperature controlled rf generator. The temperature sensor for the rf generator is a thermopile which is focused through the quartz optical flat onto the susceptor surface. With this system the rf generator will hold the temperature of the susceptor to about +0.3°C at 1200°C. The susceptor is supported on a quartz sled inclined to the gas flow to increase the uniformity of the deposition. The water jacket surrounding the reaction chamber is used to keep the quartz wall temperature low enough to limit the decomposition of the silane to the rf-heated susceptor which contains the sapphire substrates. This eliminates the reaction of silicon with the hot quartz to form SiO which deposits out on the apparatus walls, thus obscuring vision, and interferes with the optical measurements of the temperature as well as with the growth process itself. Provision is also made for "n"- and 'p"-type doping by using mixtures of either phosphine or diborane in hydrogen which are added to the silane during the growth process. The hydrogen used is the purest commercially available tank hydrogen further purified by use of a palladium diffuser. The susceptors which were used include 1) spectro-scopically pure graphite, 2) high-purity molybdenum, 3) high-resistivity silicon using a low-resistivity insert to facilitate coupling to the rf generator, 4) silicon carbide-coated graphite. The latter two susceptor materials produced silicon films on sapphire substrates with more reproducible resistivities. Prior to silicon deposition all connecting lines as well as the reaction chamber are thoroughly flushed with argon and then hydrogen. After the hydrogen flow is set, the growth temperature is adjusted to 11009 to 1150°C, and when thermal equilibrium is reached the silane flow is started. The flow rate of the hydrogen must be fast enough so that turbulent flow occurs in the size of reaction tube used, otherwise a streaked nonuniform silicon deposit occurs. After the deposition

Jan 1, 1967

By Chester T. Sims, Robert I. Jaffee

The thermoelectric behavior of the Pt—Pt-Re thermocouple and the resistance of rhenium to attack by certain molten metals is discussed. In addition, data are presented on the stress-rupture behavior of drawn wire, the tensile characteristics of rolled sheet, the variation of Young's modulus with temperature, and the effect of specimen size and fabrication method on the work harden ability. Mechanical properties of thoriated rhenium are discussed. This includes data on the effect of thoria in rhenium on tensile properties, ductility, work hardening, and recrystallization. RECENT work by the authors', has described methods of fabrication and some of the physical and mechanical properties of rhenium. Rhenium was established as a high melting, dense, refractory-type metal with favorable mechanical properties. In addition, Todd and co-workers' and others" have studied such properties of rhenium as the work function, specific heat, and the resistance of rhenium to the water cycle. Revelation of these and other properties has led to serious consideration for application as electrical contacts, high temperature thermocouples, and wear resistant materials. chanical properties reported previously,' several additional examinations have been conducted. The stress-rupture behavior and the Young's modulus of rhenium have been investigated at elevated temperatures. Tensile data have been obtained for rolled sheet, and a study of the relative work hardening characteristics of rod, wire, and sheet has been conducted. Variation of Modulus of Elasticity With Temperature—The Young's modulus of a % in. diam annealed rhenium rod was determined from room temperature to 880"C (1620OF). The rod, approximately 6 in. in length, was activated in a transverse vibration apparatus suspended in a furnace. The resonance frequencies of the rod were measured and used to calculate the moduli values. The driven frequency was 569 cycles per sec, and a protective helium atmosphere was used. The data, plotted in Fig. 1, show that the modulus decreases in an approximately linear manner with temperature over the range tested.

Jan 1, 1957

By Cyril Stanley Smith

Somewhat over ten years ago the author described studies1'2 on the constitution of the copper-silicon system. The copper-rich portion of this diagram is shown in Fig. 1. The experimental points freely dotted about the diagram seemed to justify an otherwise unconvincing diagram and for several years the curious reverse bend in the alpha-phase boundary was accepted as substantially correct, even by later investigators3 of the system who introduced changes in the high-silicon phases. The binary diagram has been used as a base for several ternary systems5-9 without any suggested changes. Voce10 suspected the existence of another phase from his study of the cast alloys in the copper-manganese-silicon system, but evidently hesitated to extrapolate this to the binary diagram, particularly in view of the too ingenious explanation that was advanced1' to account for the pools of constituent clearly visible in castings; namely, that they were secondary alpha of twinned orientation deposited from beta. Von Schwarz,12 in 1932, called attention to the fact that this micro-constituent in copper-silicon alloy castings was anisotropic under polarized light and asserted that a new phase, not cubic, should be placed in the diagram .adjacent to alpha. Sautner,l3 on the basis of investigations with the polarizing microscope and with X-rays, introduced this phase into the diagram at about 6 per cent Si. The relevant part of his diagram is shown in Fig. 2. Sautner called the new phase beta, renaming the old beta phase zeta. To avoid confusion, in redrawing Fig. 2 the phases have been renamed in accordance with the terminology adopted in the present paper, in which the new phase is called kappa and the other phases retain the designation given them by Arrhenius and Westgren.4 The thermodynamic impossibility of Sautner's diagram and the paucity of experimental data left the exact location of the new phase field most uncertain, although his work proved beyond doubt that an additional noncubic phase exists. Because of the industrial importance

Jan 1, 1940

By Cyril Stanley Smith

Somewhat over ten years ago the author described studies1'2 on the constitution of the copper-silicon system. The copper-rich portion of this diagram is shown in Fig. 1. The experimental points freely dotted about the diagram seemed to justify an otherwise unconvincing diagram and for several years the curious reverse bend in the alpha-phase boundary was accepted as substantially correct, even by later investigators3 of the system who introduced changes in the high-silicon phases. The binary diagram has been used as a base for several ternary systems5-9 without any suggested changes. Voce10 suspected the existence of another phase from his study of the cast alloys in the copper-manganese-silicon system, but evidently hesitated to extrapolate this to the binary diagram, particularly in view of the too ingenious explanation that was advanced1' to account for the pools of constituent clearly visible in castings; namely, that they were secondary alpha of twinned orientation deposited from beta. Von Schwarz,12 in 1932, called attention to the fact that this micro-constituent in copper-silicon alloy castings was anisotropic under polarized light and asserted that a new phase, not cubic, should be placed in the diagram .adjacent to alpha. Sautner,l3 on the basis of investigations with the polarizing microscope and with X-rays, introduced this phase into the diagram at about 6 per cent Si. The relevant part of his diagram is shown in Fig. 2. Sautner called the new phase beta, renaming the old beta phase zeta. To avoid confusion, in redrawing Fig. 2 the phases have been renamed in accordance with the terminology adopted in the present paper, in which the new phase is called kappa and the other phases retain the designation given them by Arrhenius and Westgren.4 The thermodynamic impossibility of Sautner's diagram and the paucity of experimental data left the exact location of the new phase field most uncertain, although his work proved beyond doubt that an additional noncubic phase exists. Because of the industrial importance

Jan 1, 1940

By R. W. Winson

Asbestos is the generic name given to a group of fibrous mineral silicates found in nature. They are all incombustible and can be separated by mechanical means into fibers of various lengths and cross sections, but each differs in chemical composition from the others. The commercial grades of asbestos consist of a spectrum of lengths and sizes and are not definitive as are most organic fibers. It is generally recognized that there are two main groups of asbestos. The first only contains the fibrous serpentine called chrysotile and comprises about 94% of the world production of asbestos. The second group contains five minerals in the amphibole series+rocidolite, amosite, anthophyllite, tremolite, and actinolite. The latter two have no commercial importance. Properties Physical The structures of asbestos fibers have been studied intensively over a number of years. X-ray diffraction patterns have been used as a means of identification and classification. Low angle X-ray scattering techniques have shown that chrysotile fibers are "hexagonally close packed" and parallel to each other, having cross-sectional diameters varying from 18014 to 300A units, while the amphibole fibers are many times larger in cross section. Electron micrographs of the more common types of as- bestos are shown in [Figs. 1-4]. [Fig. 1] illustrates the softness and flexibility of chrysotile which make it suitable for textile-type products. For a number of years there was considerable controversy over the exact nature of chrysotile fiber, but the photographic evidence in [Figs. 5-7] clearly show that it is tubular in structure. The curvature is the result of the mismatch in the dimensions of the silica [Si,O,l and brucite [Mg(OH),] layers which are on the inside and outside, respectively, of a double sheet. This curvature had been predicted by Pauling (1930) years ago based on the molecular dimensions of the two component structures.

Jan 1, 1975

By Eugene S. Meieran

The effects of methods of crystal growing, wafer sawing, polishing, routine handling, diffusion, and epitaxial growth on the defects in GaAs are reviewed and studied using reflection and transmission X-ray topographic techniques. In general, it was found that boat-grown crystals exhibited fewer defects than Czochralski crystals, although all crystals showed large numbers of precipitates visible when examined in the electron microscope. Mechanical surface treatments such as sawing and mechanical polishing introduce damage to a depth of about 5 µ, most of which can be removed by suitable chemical or chem-mechanical polishing. In addition, defects can be introduced through routine handling of wafers, for example with metallic tweezers. These defects can be quite severe, and have been observed 20 µ below the wafer surface. Defects can also be introduced through diffusion and epitaxial growth. These defects, which include precipitates, growth pyramids, stacking faults, dislocations, and so forth, can be detrimental to device fabrication. It is shown that wafers or films which appear defect-free optically can contain defects visible in the X-ray topographs. WHILE the use of GaAs in the semiconductor industry has increased very rapidly in the last few years, due mainly to the recent development of many important GaAs devices,1,2 the major limit to the production of commercial quantities of many GaAs devices remains a severe lack of suitable materials technology. This lack is apparent in two critical areas. First, production quantities of high-quality GaAs crystals, reproducibly doped and precipitate-free, simply are not available commercially, although some reasonable quality material is available on a limited first-come, first-serve basis. Second, in comparison to silicon technology, little is known about the effects of processing variables on the defects either present in as-grown GaAs or introduced through processing and handling of wafers. These areas are now receiving some attention from semiconductor device manufacturers, who are studying defects in GaAs in order to better understand how either to prevent their occurrence or to cope with their existence. Most investigations of the defects in GaAs have been made by optical microscopy3-5 or transmission electron microscopy techniques.'-' Recently, however, the imaging techniques of X-ray topography, electron mi-croprobe analysis, and scanning electron microscopy are being applied to the study of GaAs.9-14 In the case of X-ray topography, a one-to-one image is obtained that must be photographically enlarged. In compensa- tion, the defects within entire wafers may be imaged by simple scanning (Lang technique15) if the wafer is reasonably perfect, or by using the scan oscillation technique developed by Schwuttke16 if the wafer is warped or distorted. The purpose of this paper is to both review and extend the general application of X-ray topographic techniques to GaAs. Emphasis will be placed on the effects of growth and process variables on the quality and perfection of both bulk and epitaxial GaAs. Reference to optical or electron microscopy results will be made when useful. Since the effects on defects of a wide variety of processing variables such as crystal growing, sawing, polishing, diffusion, and epitaxial growth will be somewhat superficially reviewed, a fairly extensive bibliography of the most important recent results in these areas is included. However, for completeness, important defects will be illustrated here, although such defects have been previously shown by others. While this paper is concerned with defects rather than with the physics of X-ray scattering, the mechanisms of contrast formation in the topographs will of necessity be briefly mentioned. EXPERIMENTAL GaAs crystals, both boat-grown18 and Czochralski-grown,'8 containing a variety of dopants of various concentrations, were purchased from outside vendors. Wafers were sliced from the crystals using a Hamco ID saw and were mechanically polished using 1 µ diamond paste. Chem-mechanical polishing was done in bromine-methanol as described by Sullivan and Kolb.18 Chemical polishing was done using a modified sulfuric-peroxide solution, 11 parts H2SO4, 1 part 30 pct H2O2, 1 part DI water.5 Zinc diffusion was carried out in a closed tube, using a 10 pct Zn-In source at 825°C for 1 hr. Oxide masking techniques were used to select the area to be diffused. Epitaxial wafers were either purchased or prepared here. All epitaxial runs prepared here were carried out using a Ga-GaAs-AsC13 source in a closed tube at a substrate temperature of 750°C. Wafers were chem-mechanically polished and gas-etched prior to deposition. The X-ray topographs were taken on a Krystallos Lang camera, operating in the transmission scanning geometry (Lang technique15) or in the reflection scanning geometry (modified Berg-Barrett technique20,21). MoKa, radiation was used for all transmission topographs using a Jarrell-Ash 100-µ spot focus. CuKal radiation was used for all reflection topographs using a General Electric CA-7 1-mm spot focus X- ray tube. Topographs were printed from an intermediate contrast inversion film, so the contrast shown in all figures here is the same as that of the original 50-µ-thick emulsion L4 Iiford nuclear plate used to record the topograph.

Jan 1, 1969